N-Channel MOSFET, 22 A, 500 V, 3-Pin TO-220 onsemi FDP22N50N
- RS stock no.:
- 739-4860
- Mfr. Part No.:
- FDP22N50N
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 unit)**
R 73 59
(exc. VAT)
R 84 63
(inc. VAT)
10 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit |
|---|---|
| 1 - 9 | R 73,59 |
| 10 - 49 | R 71,75 |
| 50 - 99 | R 69,60 |
| 100 - 249 | R 66,82 |
| 250 + | R 64,15 |
**price indicative
- RS stock no.:
- 739-4860
- Mfr. Part No.:
- FDP22N50N
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | UniFET | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 220 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 312.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 9.9mm | |
| Height | 9.2mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 500 V | ||
Series UniFET | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 220 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 312.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 49 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 9.9mm | ||
Height 9.2mm | ||
Minimum Operating Temperature -55 °C | ||
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