onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23 NDC7002N

RS stock no.:: 739-0161
Mfr. Part No.:: NDC7002N
Manufacturer:: onsemi

onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23 NDC7002N

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 49,36

(exc. VAT)

R 56,765

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 7,645 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 20	R 9.872	R 49.36
25 - 95	R 9.626	R 48.13
100 - 245	R 9.338	R 46.69
250 - 495	R 8.964	R 44.82
500 +	R 8.606	R 43.03

*price indicative

RS stock no.:: 739-0161
Mfr. Part No.:: NDC7002N
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	510mA
	Maximum Drain Source Voltage Vds	50V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	4Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Power Dissipation Pd	960mW
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	150°C
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Length	3mm
	Standards/Approvals	No
	Width	1.7 mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 510mA
	Maximum Drain Source Voltage Vds 50V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 4Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Power Dissipation Pd 960mW
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature 150°C
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Length 3mm
	Standards/Approvals No
	Width 1.7 mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23 NDC7002N

FREE delivery for orders over R 1,500.00

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