N-Channel MOSFET Transistor, 10 A, 30 V, 3-Pin IPAK onsemi NTD4963N-1G
- RS stock no.:
- 719-2881
- Mfr. Part No.:
- NTD4963N-1G
- Manufacturer:
- ON Semiconductor
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- RS stock no.:
- 719-2881
- Mfr. Part No.:
- NTD4963N-1G
- Manufacturer:
- ON Semiconductor
Specification
Technical data sheets
Legislation and Compliance
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Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | IPAK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 1.1 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Width | 2.38mm | |
| Typical Gate Charge @ Vgs | 8.1 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 7.49mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type IPAK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 1.1 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Width 2.38mm | ||
Typical Gate Charge @ Vgs 8.1 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 7.49mm | ||