IXYS HiperFET, Polar Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 3-Pin TO-264

Image representative of range

Bulk discount available

Subtotal 2 units (supplied in a tube)*

R 1 372,24

(exc. VAT)

R 1 578,08

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 398 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
2 - 4R 686.12
5 - 9R 665.54
10 - 19R 638.92
20 +R 613.36

*price indicative

Packaging Options:
RS stock no.:
711-5360P
Mfr. Part No.:
IXFK26N120P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

1200V

Series

HiperFET, Polar

Package Type

TO-264

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

460mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960W

Typical Gate Charge Qg @ Vgs

225nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

19.96mm

Height

26.16mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy