IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V Enhancement, 3-Pin TO-264

Image representative of range

Bulk discount available
View bulk pricing options

Subtotal 2 units (supplied in a tube)*

R 1 089,26

(exc. VAT)

R 1 252,64

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 33 unit(s) shipping from 15 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
2 - 4R 544.63
5 - 9R 528.29
10 - 19R 507.16
20 +R 486.87

*price indicative

Packaging Options:
RS stock no.:
711-5360P
Mfr. Part No.:
IXFK26N120P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-264

Series

HiperFET, Polar

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

460mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960W

Typical Gate Charge Qg @ Vgs

225nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Length

19.96mm

Height

26.16mm

Width

5.13mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy