DiodesZetex Type N-Channel MOSFET, 2.4 A, 20 V Enhancement, 3-Pin SOT-23 ZXMN2B01FTA
- RS stock no.:
- 708-2591
- Mfr. Part No.:
- ZXMN2B01FTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 53,09
(exc. VAT)
R 61,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 10 unit(s) ready to ship from another location
- Plus 4,610 unit(s) shipping from 06 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 5.309 | R 53.09 |
| 50 - 90 | R 5.176 | R 51.76 |
| 100 - 190 | R 5.021 | R 50.21 |
| 200 - 490 | R 4.82 | R 48.20 |
| 500 + | R 4.627 | R 46.27 |
*price indicative
- RS stock no.:
- 708-2591
- Mfr. Part No.:
- ZXMN2B01FTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 806mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Forward Voltage Vf | 0.73V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 806mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Forward Voltage Vf 0.73V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin SOT-23 ZXMN2B01FTA
- onsemi PowerTrench P-Channel MOSFET 20 V, 3-Pin SOT-23 FDN302P
- onsemi PowerTrench P-Channel MOSFET 20 V, 3-Pin SOT-23 FDN304P
- onsemi PowerTrench P-Channel MOSFET 20 V, 3-Pin SOT-23 FDN304PZ
- onsemi P-Channel MOSFET 20 V, 3-Pin SOT-23 NTR4101PT1G
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin SOT-23 ZXMN2A01FTA
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin SOT-23 ZXMN2F30FHTA
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin SOT-23 ZXM61N02FTA