Essential and Operational Technologies

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Units	Per unit
50 - 198	R 7,975
200 - 498	R 7,735
500 - 998	R 7,425
1000 +	R 7,13

Select all	Attribute	Value
	Manufacturer	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	3.2 A
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	80 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	1.25 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Typical Gate Charge @ Vgs	2.4 nC @ 4.5 V
	Length	2.9mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	1.3mm
	Height	0.94mm
	Minimum Operating Temperature	-55 °C

	Select all
	Manufacturer onsemi
	Channel Type N
	Maximum Continuous Drain Current 3.2 A
	Maximum Drain Source Voltage 20 V
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 80 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 1.25 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Typical Gate Charge @ Vgs 2.4 nC @ 4.5 V
	Length 2.9mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Width 1.3mm
	Height 0.94mm
	Minimum Operating Temperature -55 °C

N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 onsemi NTR4501NT1G

FREE delivery for orders over R 1500

N-Channel Power MOSFET, 20V, ON Semiconductor

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