onsemi QFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252 FQD8P10TM
- RS stock no.:
- 671-1043
- Mfr. Part No.:
- FQD8P10TM
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 85,03
(exc. VAT)
R 97,785
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 25 unit(s) shipping from 01 June 2026
- Plus 7,200 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 17.006 | R 85.03 |
| 25 - 95 | R 16.58 | R 82.90 |
| 100 - 245 | R 16.082 | R 80.41 |
| 250 - 495 | R 15.438 | R 77.19 |
| 500 + | R 14.82 | R 74.10 |
*price indicative
- RS stock no.:
- 671-1043
- Mfr. Part No.:
- FQD8P10TM
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | QFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 530mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -4V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series QFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 530mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -4V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.6mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive P-Channel MOSFET, Fairchild Semiconductor
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MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
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