onsemi QFET Type P-Channel MOSFET, 22 A, 100 V Enhancement, 3-Pin TO-263 FQB22P10TM
- RS stock no.:
- 671-0879
- Mfr. Part No.:
- FQB22P10TM
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 237,96
(exc. VAT)
R 273,655
(inc. VAT)
FREE delivery for orders over R 1,500.00
Supply shortage
- Plus 20 left, shipping from 22 June 2026
- Plus 1,200 left, shipping from 29 June 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 47.592 | R 237.96 |
| 25 - 95 | R 46.402 | R 232.01 |
| 100 - 245 | R 45.01 | R 225.05 |
| 250 - 495 | R 43.21 | R 216.05 |
| 500 + | R 41.482 | R 207.41 |
*price indicative
- RS stock no.:
- 671-0879
- Mfr. Part No.:
- FQB22P10TM
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | QFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -4V | |
| Maximum Power Dissipation Pd | 3.75W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series QFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -4V | ||
Maximum Power Dissipation Pd 3.75W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 FQB12P20TM
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 FQB34P10TM
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 FQB27P06TM
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 FQB47P06TM-AM002