onsemi FDS Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC FDS4435BZ
- RS stock no.:
- 671-0508
- Mfr. Part No.:
- FDS4435BZ
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 65,28
(exc. VAT)
R 75,07
(inc. VAT)
FREE delivery for orders over R 1,500.00
Supply shortage
- Plus 190 left, shipping from 29 December 2025
- Plus 12,560 left, shipping from 05 January 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 13.056 | R 65.28 |
| 25 - 95 | R 12.73 | R 63.65 |
| 100 - 245 | R 12.348 | R 61.74 |
| 250 - 495 | R 11.854 | R 59.27 |
| 500 + | R 11.38 | R 56.90 |
*price indicative
- RS stock no.:
- 671-0508
- Mfr. Part No.:
- FDS4435BZ
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | FDS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series FDS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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