DiodesZetex ZXMN3A01F Type N-Channel MOSFET, 2 A, 30 V Enhancement, 3-Pin SOT-23 ZXMN3A01FTA
- RS stock no.:
- 669-7385
- Mfr. Part No.:
- ZXMN3A01FTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 25 units)*
R 132,10
(exc. VAT)
R 151,925
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 75 unit(s) ready to ship from another location
- Plus 4,925 unit(s) shipping from 09 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 5.284 | R 132.10 |
| 125 - 475 | R 5.152 | R 128.80 |
| 500 - 1225 | R 4.998 | R 124.95 |
| 1250 - 2475 | R 4.798 | R 119.95 |
| 2500 + | R 4.606 | R 115.15 |
*price indicative
- RS stock no.:
- 669-7385
- Mfr. Part No.:
- ZXMN3A01FTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | ZXMN3A01F | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.95V | |
| Maximum Power Dissipation Pd | 806mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.05mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series ZXMN3A01F | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.95V | ||
Maximum Power Dissipation Pd 806mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.05mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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