Specification

Technical data sheets

Legislation and Compliance

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Select all	Attribute	Value
	Brand	International Rectifier
	Channel Type	N
	Maximum Continuous Drain Current	30 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-247AC
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	75 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	214 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	5.3mm
	Length	15.9mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	123 nC @ 10 V
	Height	20.3mm
	Series	HEXFET
	Minimum Operating Temperature	-55 °C

	Select all
	Brand International Rectifier
	Channel Type N
	Maximum Continuous Drain Current 30 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-247AC
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 75 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 214 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Width 5.3mm
	Length 15.9mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 123 nC @ 10 V
	Height 20.3mm
	Series HEXFET
	Minimum Operating Temperature -55 °C

IRFP250NPbF N-channel MOSFET Data Sheet

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF

This power MOSFET is engineered for high performance across various electronic applications. As an N-channel MOSFET, it efficiently enhances current flow when voltage is applied. It is notable for its capacity to manage high current levels while maintaining low on-resistance, which makes it suitable for power-intensive applications.

Features & Benefits

• Continuous drain current rating of 30A supports robust performance

• Power dissipation capacity of 214W accommodates heavy-duty applications

• Maximum drain-source voltage of 200V contributes to device reliability

• Low Rds(on) of 75 mΩ minimises energy loss during operation

• Enhancement mode improves control and efficiency in circuit applications

• Compatible with TO-247AC package for seamless integration into existing systems

Applications

• Power supplies for industrial automation

• Driving high-current loads in electronic circuits

• Converters and inverters in renewable energy systems

• Motor control requiring fast switching

How does this MOSFET handle high temperatures?

With a maximum operating temperature of +175°C, it functions effectively in high-thermal environments, ensuring consistent performance under stress.

What are the implications of the specified on-resistance?

A low Rds(on) of 75 mΩ results in reduced power losses, enhancing overall efficiency and decreasing heat generation during use.

Is this device suitable for pulsed applications?

Yes, it can handle pulsed drain currents up to 120A, making it appropriate for short-duration, high-current applications.

How does it manage gate voltage during operation?

The device accommodates a range of gate-to-source voltages from -20 V to +20 V, providing flexibility in various control circuits.

What is the significance of the avalanche ratings?

The single pulse avalanche energy rating of 315 mJ indicates its capability to endure brief energy surges, safeguarding it under fault conditions.

N-channel MOSFET,IRFP250N 30A 200V 214W