STMicroelectronics STW Type N-Channel MOSFET, 92 A Enhancement, 4-Pin TO-247-4 STW65N023M9-4
- RS stock no.:
- 275-1382
- Mfr. Part No.:
- STW65N023M9-4
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 242,11
(exc. VAT)
R 278,43
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 285 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | R 242.11 |
| 5 - 9 | R 236.06 |
| 10 - 29 | R 228.98 |
| 30 - 119 | R 219.82 |
| 120 + | R 211.03 |
*price indicative
- RS stock no.:
- 275-1382
- Mfr. Part No.:
- STW65N023M9-4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 92A | |
| Series | STW | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 463W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 5mm | |
| Standards/Approvals | RoHS | |
| Width | 15.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 92A | ||
Series STW | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 463W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Operating Temperature 150°C | ||
Height 5mm | ||
Standards/Approvals RoHS | ||
Width 15.8 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
Related links
- STMicroelectronics Dual Silicon N-Channel MOSFET 92 A, 4-Pin TO247-4 STW65N023M9-4
- STMicroelectronics Dual Silicon N-Channel MOSFET 92 A, 3-Pin TO-247 STWA65N023M9
- STMicroelectronics STW65N Silicon N-Channel MOSFET 650 V, 3-Pin TO247-4 STW65N045M9-4
- STMicroelectronics Dual Silicon N-Channel MOSFET 56 A, 3-Pin TO-247 STWA60N043DM9
- Infineon IPW N-Channel MOSFET 600 V, 4-Pin PG-TO247-4 IPW60R037CM8XKSA1
- Infineon HEXFET Silicon N-Channel MOSFET 30 V, 3-Pin TO-220 IRLB8748PBF
- STMicroelectronics STGW100H65FB2-4 IGBT 4-Pin TO247-4
- onsemi NTH SiC N-Channel MOSFET 1200 V, 4-Pin TO247-4L NTH4L013N120M3S