Infineon ISP Type P-Channel P-Channel, 1.9 A, 60 V Enhancement, 3-Pin PG-SOT223
- RS stock no.:
- 273-3042
- Mfr. Part No.:
- ISP26DP06NMSATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 176,725
(exc. VAT)
R 203,225
(inc. VAT)
Add 225 units to get free delivery
In Stock
- Plus 2,925 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.069 | R 176.73 |
| 50 - 75 | R 6.892 | R 172.30 |
| 100 - 225 | R 6.686 | R 167.15 |
| 250 - 975 | R 6.418 | R 160.45 |
| 1000 + | R 6.161 | R 154.03 |
*price indicative
- RS stock no.:
- 273-3042
- Mfr. Part No.:
- ISP26DP06NMSATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | P-Channel | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-SOT223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 260mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 10.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type P-Channel | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-SOT223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 260mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 10.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications.
Easy interface to MCU
Fast switching
Avalanche ruggedness
Related links
- Infineon ISP Type P-Channel P-Channel 60 V Enhancement, 3-Pin PG-SOT223 ISP26DP06NMSATMA1
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223 ISP25DP06NMXTSA1
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223 ISP25DP06LMXTSA1
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223