Infineon OptiMOS Type N-Channel MOSFET, 57 A, 650 V Enhancement, 10-Pin PG-HDSOP-10-1
- RS stock no.:
- 273-2788
- Mfr. Part No.:
- IPDD60R050G7XTMA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
R 153,12
(exc. VAT)
R 176,09
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 100 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 49 | R 153.12 |
| 50 - 99 | R 149.29 |
| 100 - 249 | R 144.81 |
| 250 - 499 | R 139.02 |
| 500 + | R 133.46 |
*price indicative
- RS stock no.:
- 273-2788
- Mfr. Part No.:
- IPDD60R050G7XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | OptiMOS | |
| Package Type | PG-HDSOP-10-1 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series OptiMOS | ||
Package Type PG-HDSOP-10-1 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is easy to use and has the highest quality standards. It is possibility to increase economies of scales by usage in PFC and PWM topologies in the application. It reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing.
Total Pb free
RoHS compliant
Easy visual inspection leads
Improve thermal performance
Suitable for hard and soft switching
Related links
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