Vishay SQJ Type N-Channel MOSFET, 66 A, 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- RS stock no.:
- 268-8366
- Mfr. Part No.:
- SQJ186ELP-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 161,58
(exc. VAT)
R 185,82
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 11 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 16.158 | R 161.58 |
| 50 - 90 | R 15.754 | R 157.54 |
| 100 - 240 | R 15.281 | R 152.81 |
| 250 - 990 | R 14.67 | R 146.70 |
| 1000 + | R 14.083 | R 140.83 |
*price indicative
- RS stock no.:
- 268-8366
- Mfr. Part No.:
- SQJ186ELP-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SQJ | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 135W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 4.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SQJ | ||
Package Type PowerPAK SO-8L | ||
Mount Type PCB | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 135W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 4.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and that has independent of operating temperature.
AEC Q101 qualified
ROHS compliant
UIS tested 100 percent
Related links
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