Vishay SIJH Type N-Channel MOSFET, 174 A, 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- RS stock no.:
- 268-8325
- Mfr. Part No.:
- SIJH5700E-T1-GE3
- Manufacturer:
- Vishay
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Subtotal (1 unit)*
R 131,72
(exc. VAT)
R 151,48
(inc. VAT)
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In Stock
- Plus 1,870 unit(s) shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 1 - 49 | R 131.72 |
| 50 - 99 | R 128.43 |
| 100 - 249 | R 124.58 |
| 250 - 999 | R 119.60 |
| 1000 + | R 114.82 |
*price indicative
- RS stock no.:
- 268-8325
- Mfr. Part No.:
- SIJH5700E-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK (8x8L) | |
| Series | SIJH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0041Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 7.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK (8x8L) | ||
Series SIJH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0041Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 7.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is fully lead Pb free device. It is used in applications such as synchronous rectification, motor drive control, battery management.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
Related links
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