ROHM RD3P07BBH Type N-Channel MOSFET, 50 A, 6 V Enhancement, 3-Pin TO-252 RD3P07BBHTL1
- RS stock no.:
- 266-3850
- Mfr. Part No.:
- RD3P07BBHTL1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 300,82
(exc. VAT)
R 345,945
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,500 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 60.164 | R 300.82 |
| 50 - 95 | R 58.66 | R 293.30 |
| 100 - 245 | R 56.90 | R 284.50 |
| 250 - 995 | R 54.624 | R 273.12 |
| 1000 + | R 52.44 | R 262.20 |
*price indicative
- RS stock no.:
- 266-3850
- Mfr. Part No.:
- RD3P07BBHTL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 6V | |
| Series | RD3P07BBH | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-Free Plating | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 6V | ||
Series RD3P07BBH | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-Free Plating | ||
Automotive Standard No | ||
The ROHM power MOSFET with low-on resistance and high power package, suitable for switching.
Pb free plating
RoHS compliant
Halogen free
Related links
- ROHM N-Channel MOSFET 6 V, 3-Pin DPAK RD3P07BBHTL1
- ROHM N-Channel MOSFET 6 V, 3-Pin DPAK RD3P03BBHTL1
- ROHM N-Channel MOSFET 6 V, 3-Pin DPAK RD3R05BBHTL1
- ROHM N-Channel MOSFET 6 V, 3-Pin DPAK RD3R02BBHTL1
- ROHM RD3G500GN N-Channel MOSFET 40 V, 3-Pin DPAK RD3G500GNTL
- Infineon N-Channel MOSFET 60 V, 3-Pin DPAK IPD079N06L3GATMA1
- Vishay SQ Rugged N-Channel MOSFET 50 V, 3-Pin DPAK SQD50N05-11L_GE3
- Infineon N-Channel MOSFET 100 V, 3-Pin DPAK IPD50N10S3L16ATMA1