Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N06S4H1ATMA2

Image representative of range

Bulk discount available

Subtotal (1 pack of 2 units)*

R 158,00

(exc. VAT)

R 181,70

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 934 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 48R 79.00R 158.00
50 - 98R 77.025R 154.05
100 - 248R 74.715R 149.43
250 - 498R 71.725R 143.45
500 +R 68.855R 137.71

*price indicative

Packaging Options:
RS stock no.:
260-5120
Mfr. Part No.:
IPB180N06S4H1ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Package Type

TO-263

Series

iPB

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon N channel optiMOS power MOSFETs provide excellent gate charge. It has highest current capability. This N channel MOSFET transistor operates in enhancement mode.

N channel enhancement mode

MSL1 up to 260°C peak reflow

100% Avalanche tested

Related links