Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N06S4H1ATMA2

Image representative of range

Bulk discount available

Subtotal (1 pack of 2 units)*

R 141,11

(exc. VAT)

R 162,276

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 934 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 48R 70.555R 141.11
50 - 98R 68.79R 137.58
100 - 248R 66.725R 133.45
250 - 498R 64.055R 128.11
500 +R 61.495R 122.99

*price indicative

Packaging Options:
RS stock no.:
260-5120
Mfr. Part No.:
IPB180N06S4H1ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Series

iPB

Package Type

TO-263

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon N channel optiMOS power MOSFETs provide excellent gate charge. It has highest current capability. This N channel MOSFET transistor operates in enhancement mode.

N channel enhancement mode

MSL1 up to 260°C peak reflow

100% Avalanche tested

Related links