Infineon MOSFET, 50 A, 2000 V AG-EASY3B

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Bulk discount available

Subtotal (1 tray of 8 units)*

R 36 024,152

(exc. VAT)

R 41 427,776

(inc. VAT)

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  • 8 unit(s) ready to ship from another location
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Units
Per unit
Per Tray*
8 - 8R 4,503.019R 36,024.15
16 - 16R 4,390.444R 35,123.55
24 +R 4,258.73R 34,069.84

*price indicative

RS stock no.:
260-1092
Mfr. Part No.:
DF419MR20W3M1HFB11BPSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

2000V

Package Type

AG-EASY3B

Mount Type

Surface

Maximum Drain Source Resistance Rds

26.5mΩ

Forward Voltage Vf

6.15V

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFET features a 4-leg boost configuration in one Easy 3B housing and comes with the latest CoolSiC M1H generation. The 2000 V SiC MOSFET shares the same performance and benefits as the 1200 V M1H series incl. 12% lower RDS(on) at 125° C, wider gate source voltage area for higher flexibility, a maximum junction temperature of 175° C and smaller chip sizes.

High current density

Low inductive design

Rugged mounting due to integrated mounting clamps

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