Infineon IPP N-Channel MOSFET, 121 A, 40 V Enhancement, 3-Pin TO-220 IPP026N04NF2SAKMA1
- RS stock no.:
- 260-1060
- Mfr. Part No.:
- IPP026N04NF2SAKMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 82,79
(exc. VAT)
R 95,208
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 958 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 41.395 | R 82.79 |
| 10 - 98 | R 40.36 | R 80.72 |
| 100 - 248 | R 39.15 | R 78.30 |
| 250 - 498 | R 37.585 | R 75.17 |
| 500 + | R 36.08 | R 72.16 |
*price indicative
- RS stock no.:
- 260-1060
- Mfr. Part No.:
- IPP026N04NF2SAKMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 121A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.88V | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.67mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Length | 15.8mm | |
| Height | 4.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 121A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.88V | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 10.67mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Length 15.8mm | ||
Height 4.75mm | ||
Automotive Standard No | ||
The Infineon MOSFET provides an addressing a broad range of applications from low to high switching frequency having a broad availability from distribution partners to excellent price and performance ratio.
High current rating
Industry standard footprint through hole package
Related links
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