Infineon iPB Type N-Channel MOSFET, 135 A, 100 V P TO-263 IPB043N10NF2SATMA1

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Subtotal (1 pack of 2 units)*

R 58,45

(exc. VAT)

R 67,218

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 29.225R 58.45
10 - 98R 28.495R 56.99
100 - 248R 27.64R 55.28
250 - 498R 26.535R 53.07
500 +R 25.475R 50.95

*price indicative

Packaging Options:
RS stock no.:
259-2588
Mfr. Part No.:
IPB043N10NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

135A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Channel Mode

P

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.

Broad availability from distribution partners

Excellent price/performance ratio

Ideal for high and low switching frequencies

Industry standard footprint through-hole package

High current rating

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