Infineon IPP Type N-Channel MOSFET, 50 A, 650 V TO-220 IPP65R041CFD7XKSA1

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R 148,93

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R 171,27

(inc. VAT)

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1 - 9R 148.93
10 - 14R 145.21
15 - 19R 140.85
20 - 24R 135.22
25 +R 129.81

*price indicative

Packaging Options:
RS stock no.:
258-3897
Mfr. Part No.:
IPP65R041CFD7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

IPP

Maximum Drain Source Resistance Rds

41mΩ

Maximum Power Dissipation Pd

227W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

102nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 650V CoolMOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Ultrafast body diode and very low Qrr

650V breakdown voltage

Significantly reduced switching losses compared to competition

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

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