Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET, 20 A, 60 V TDSON

Image representative of range

Bulk discount available

Subtotal (1 pack of 2 units)*

R 74,31

(exc. VAT)

R 85,456

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 4,976 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8R 37.155R 74.31
10 - 98R 36.225R 72.45
100 - 248R 35.14R 70.28
250 - 498R 33.735R 67.47
500 +R 32.385R 64.77

*price indicative

Packaging Options:
RS stock no.:
258-3879
Mfr. Part No.:
IPG20N06S4L11ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Series

IPG20N06S4L-11

Package Type

TDSON

Typical Gate Charge Qg @ Vgs

53nC

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

±16 V

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon OptiMOS T2 power-transistor is dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Exposed pad provides excellent thermal transfer, two N-Channel MOSFETs in one package with 2 isolated lead frames.

Dual N-channel Logic Level - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

Related links