Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252 IPD85P04P407ATMA2
- RS stock no.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 pack of 2 units)*
R 63,42
(exc. VAT)
R 72,94
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,572 unit(s) shipping from 02 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 31.71 | R 63.42 |
| 10 - 98 | R 30.915 | R 61.83 |
| 100 - 248 | R 29.99 | R 59.98 |
| 250 - 498 | R 28.79 | R 57.58 |
| 500 + | R 27.64 | R 55.28 |
*price indicative
- RS stock no.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -85A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 88W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -85A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 88W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252
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- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252