Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252 IPD85P04P407ATMA2
- RS stock no.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 62,24
(exc. VAT)
R 71,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,574 unit(s) shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 31.12 | R 62.24 |
| 10 - 98 | R 30.34 | R 60.68 |
| 100 - 248 | R 29.43 | R 58.86 |
| 250 - 498 | R 28.255 | R 56.51 |
| 500 + | R 27.125 | R 54.25 |
*price indicative
- RS stock no.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -85A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -85A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
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- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252