Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252 IPD85P04P407ATMA2
- RS stock no.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 56,82
(exc. VAT)
R 65,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,580 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 28.41 | R 56.82 |
| 10 - 98 | R 27.70 | R 55.40 |
| 100 - 248 | R 26.87 | R 53.74 |
| 250 - 498 | R 25.795 | R 51.59 |
| 500 + | R 24.765 | R 49.53 |
*price indicative
- RS stock no.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -85A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -85A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD85P04P407ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD70P04P409ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD90P04P405ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD50P04P4L11ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD90P04P4L04ATMA2
- Infineon N-Channel MOSFET 40 V PG-TO252-3-313 IPD50N04S4L08ATMA1
- Infineon N-Channel MOSFET 100 V PG-TO252-3-313 IPD60N10S412ATMA1
- Infineon P-Channel MOSFET 100 V PG-TO252-3 SPD04P10PGBTMA1