Infineon iPB Type N-Channel MOSFET, 260 A, 80 V P, 7-Pin TO-263 IPB015N08N5ATMA1

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R 132,18

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R 152,01

(inc. VAT)

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1 - 9R 132.18
10 - 99R 128.88
100 - 249R 125.01
250 - 499R 120.01
500 +R 115.21

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Packaging Options:
RS stock no.:
258-3784
Mfr. Part No.:
IPB015N08N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

260A

Maximum Drain Source Voltage Vds

80V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.5mΩ

Channel Mode

P

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

178nC

Forward Voltage Vf

0.86V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

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