Infineon Type N-Channel MOSFET, 1200 V N TO-247
- RS stock no.:
- 258-3763
- Mfr. Part No.:
- IMZ120R060M1HXKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tube of 30 units)*
R 5 333,94
(exc. VAT)
R 6 134,04
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 60 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 177.798 | R 5,333.94 |
| 60 - 60 | R 173.353 | R 5,200.59 |
| 90 + | R 168.153 | R 5,044.59 |
*price indicative
- RS stock no.:
- 258-3763
- Mfr. Part No.:
- IMZ120R060M1HXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 5.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 5.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC 1200 V, 60 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Highest efficiency
Reduced cooling effort
Related links
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