Infineon HEXFET Type N-Channel MOSFET, 265 A, 40 V PQFN IRFH7084TRPBF
- RS stock no.:
- 257-5804
- Mfr. Part No.:
- IRFH7084TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 182,43
(exc. VAT)
R 209,795
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,445 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 36.486 | R 182.43 |
| 50 - 95 | R 35.574 | R 177.87 |
| 100 - 495 | R 34.506 | R 172.53 |
| 500 - 1995 | R 33.126 | R 165.63 |
| 2000 + | R 31.80 | R 159.00 |
*price indicative
- RS stock no.:
- 257-5804
- Mfr. Part No.:
- IRFH7084TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 265A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.25mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 5 mm | |
| Length | 6mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 265A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.25mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 5 mm | ||
Length 6mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Related links
- Infineon HEXFET N-Channel MOSFET 40 V PQFN IRFH7084TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V PQFN 5mm x 6mm IRFH7440TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V PQFN 5mm x 6mm IRFH7446TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V PQFN 5mm x 6mm IRFH7004TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V PQFN IRLHM620TRPBF
- Infineon HEXFET N-Channel MOSFET 60 V PQFN 5mm x 6mm IRFH5406TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V PQFN 3.3mm x 3.3mm IRLHM630TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V PQFN 5mm x 6mm IRFH5302TRPBF
