Infineon HEXFET Type N-Channel MOSFET, 265 A, 40 V PQFN IRFH7084TRPBF

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Subtotal (1 pack of 5 units)*

R 177,41

(exc. VAT)

R 204,02

(inc. VAT)

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In Stock
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Units
Per unit
Per Pack*
5 - 45R 35.482R 177.41
50 - 95R 34.594R 172.97
100 - 495R 33.556R 167.78
500 - 1995R 32.214R 161.07
2000 +R 30.926R 154.63

*price indicative

Packaging Options:
RS stock no.:
257-5804
Mfr. Part No.:
IRFH7084TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

265A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Maximum Drain Source Resistance Rds

1.25mΩ

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

156W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

127nC

Maximum Operating Temperature

150°C

Width

5 mm

Standards/Approvals

RoHS

Length

6mm

Height

1.05mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available

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