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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-263
	Series	NTB
	Mount Type	Through Hole
	Pin Count	7
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	22 V
	Typical Gate Charge Qg @ Vgs	164nC
	Maximum Power Dissipation Pd	117W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	4.5V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-263
	Series NTB
	Mount Type Through Hole
	Pin Count 7
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 22 V
	Typical Gate Charge Qg @ Vgs 164nC
	Maximum Power Dissipation Pd 117W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 4.5V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - NTBG025N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK−7L

The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication

Ultra low gate charge

High speed switching and low capacitance

onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK−7L

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