Infineon ISP Type P-Channel MOSFET, -2.8 A, 40 V Enhancement, 3-Pin SOT-223 ISP25DP06LMSATMA1

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Subtotal (1 pack of 5 units)*

R 57,52

(exc. VAT)

R 66,15

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 11.504R 57.52
10 - 95R 11.216R 56.08
100 - 245R 10.88R 54.40
250 - 495R 10.444R 52.22
500 +R 10.026R 50.13

*price indicative

Packaging Options:
RS stock no.:
250-0566
Mfr. Part No.:
ISP25DP06LMSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-2.8A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-223

Series

ISP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications.

Easy interface to MCU

Fast switching

Avalanche ruggedness

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