ROHM RW4E065GN Type N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7

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Subtotal (1 reel of 3000 units)*

R 18 717,00

(exc. VAT)

R 21 525,00

(inc. VAT)

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3000 +R 6.239R 18,717.00

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RS stock no.:
249-1135
Mfr. Part No.:
RW4E065GNTCL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.7A

Maximum Drain Source Voltage Vds

30V

Package Type

HEML1616L7

Series

RW4E065GN

Pin Count

7

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.3nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 30 V drain-source voltage and 6.5 A drain current, taping packing type.

Low on-resistance

Pb-free plating

RoHS compliant

Halogen free

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