DiodesZetex Type N-Channel MOSFET, 11 A, 20 V Enhancement, 6-Pin UDFN-2020 DMN29M9UFDF-7

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Subtotal (1 pack of 25 units)*

R 177,225

(exc. VAT)

R 203,80

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25R 7.089R 177.23
50 - 75R 6.912R 172.80
100 - 225R 6.705R 167.63
250 - 975R 6.437R 160.93
1000 +R 6.179R 154.48

*price indicative

Packaging Options:
RS stock no.:
246-7515
Mfr. Part No.:
DMN29M9UFDF-7
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

20V

Package Type

UDFN-2020

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.73W

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

2.05mm

Width

2.05 mm

Height

0.63mm

Automotive Standard

AEC-Q101

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate

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