Infineon IAUT Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TO-263 IAUT300N08S5N014ATMA1

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R 107,34

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1 - 9R 93.34
10 - 99R 91.01
100 - 249R 88.28
250 - 499R 84.75
500 +R 81.36

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Packaging Options:
RS stock no.:
244-0893
Mfr. Part No.:
IAUT300N08S5N014ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Series

IAUT

Package Type

TO-263

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET IAUT300N08S5N014ATMA1 Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

N-channel - Enhancement mode

AEC qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

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