Infineon AUIRFS Type P-Channel MOSFET, 230 A, 75 V, 3-Pin TO-252 AUIRFR5305TR
- RS stock no.:
- 244-0891
- Mfr. Part No.:
- AUIRFR5305TR
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 pack of 2 units)*
R 122,41
(exc. VAT)
R 140,772
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,664 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 61.205 | R 122.41 |
| 10 - 98 | R 59.675 | R 119.35 |
| 100 - 248 | R 57.885 | R 115.77 |
| 250 - 498 | R 55.57 | R 111.14 |
| 500 + | R 53.345 | R 106.69 |
*price indicative
- RS stock no.:
- 244-0891
- Mfr. Part No.:
- AUIRFR5305TR
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | AUIRFS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series AUIRFS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Related links
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