Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC120N04S6L012ATMA1
- RS stock no.:
- 241-9890
- Mfr. Part No.:
- IAUC120N04S6L012ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 60,78
(exc. VAT)
R 69,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 14,988 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 30.39 | R 60.78 |
| 10 - 98 | R 29.63 | R 59.26 |
| 100 - 248 | R 28.74 | R 57.48 |
| 250 - 498 | R 27.59 | R 55.18 |
| 500 + | R 26.485 | R 52.97 |
*price indicative
- RS stock no.:
- 241-9890
- Mfr. Part No.:
- IAUC120N04S6L012ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | IAUC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series IAUC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 6 Power-Transistor is a N channel power MOSFET for automotive applications. It is 100% Avalanche tested.
AEC Q101 qualified
MSL1 up to 260°C peak reflow
Green Product (RoHS compliant)
Related links
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC90N10S5N062ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6N010ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6L009ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6N013ATMA1
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON IAUC120N06S5N017ATMA1
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON IAUC120N06S5L032ATMA1