Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1
- RS stock no.:
- 241-9681
- Mfr. Part No.:
- BSZ040N06LS5ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 166,84
(exc. VAT)
R 191,865
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 6,910 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 33.368 | R 166.84 |
| 10 - 95 | R 32.534 | R 162.67 |
| 100 - 245 | R 31.558 | R 157.79 |
| 250 - 495 | R 30.296 | R 151.48 |
| 500 + | R 29.084 | R 145.42 |
*price indicative
- RS stock no.:
- 241-9681
- Mfr. Part No.:
- BSZ040N06LS5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel power MOSFET has 60 V drain source voltage (VDS) & 101 A drain current (ID). It's logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Optimized for high performance SMPS ,e.g. sync. rec.
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHScompliant
Halogen-free according to IEC61249-2-21
Related links
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1
- Infineon N-Channel MOSFET Transistor 20 V, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSC066N06NSATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSC097N06NSTATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1
- Infineon N-Channel MOSFET Transistor 40 V, 8-Pin SuperSO8 5 x 6 IPZ40N04S5L2R8ATMA1
- Infineon N-Channel MOSFET Transistor 80 V, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin SuperSO8 5 x 6 IAUC24N10S5L300ATMA1