Infineon ISK Type N-Channel MOSFET, 55 A, 25 V, 6-Pin PQFN ISK024NE2LM5

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Subtotal (1 pack of 5 units)*

R 58,45

(exc. VAT)

R 67,20

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 11.69R 58.45
10 - 95R 11.398R 56.99
100 - 245R 11.056R 55.28
250 - 495R 10.614R 53.07
500 +R 10.19R 50.95

*price indicative

Packaging Options:
RS stock no.:
240-6377
Mfr. Part No.:
ISK024NE2LM5
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

25V

Package Type

PQFN

Series

ISK

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

2.4mΩ

Forward Voltage Vf

0.81V

Maximum Power Dissipation Pd

171W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS™ 5 power MOSFET 25 V, 2.4 mΩ, smallest form factor in PQFN 2x2 package. With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a best-in-class solution for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC applications. The small 4 mm2 footprint PQFN 2x2 package, combined with outstanding electrical performance contributes towards form factor improvement in end applications, featuring low RDSon of 2.4 mΩ.

Superior thermal resistance for a PQFN 2x2 package

Optimized for highest performance and power density

Industry’s lowest RDSon in smallest PQFN 2x2 package

N-channel

100% Avalanche tested

Pb-free lead plating; RoHS compliant

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