Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 TN5325K1-G

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

R 238,875

(exc. VAT)

R 274,70

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 25R 9.555R 238.88
50 - 75R 9.316R 232.90
100 - 225R 9.036R 225.90
250 - 975R 8.675R 216.88
1000 +R 8.328R 208.20

*price indicative

Packaging Options:
RS stock no.:
239-5618
Mfr. Part No.:
TN5325K1-G
Manufacturer:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

650V

Series

TN5325

Package Type

TO-92

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

140W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Low threshold of maximum 2V

High input impedance and high gain

Rise Time of 15 ns

Turn-off Delay Time of 25 ns

Fall Time of 25 ns

Related links