Infineon ISC Type N-Channel MOSFET, 192 A, 100 V, 8-Pin TDSON ISC027N10NM6ATMA1

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Subtotal (1 pack of 2 units)*

R 136,84

(exc. VAT)

R 157,36

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 68.42R 136.84
10 - 98R 66.71R 133.42
100 - 248R 64.71R 129.42
250 - 498R 62.12R 124.24
500 +R 59.635R 119.27

*price indicative

Packaging Options:
RS stock no.:
235-4865
Mfr. Part No.:
ISC027N10NM6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

192A

Maximum Drain Source Voltage Vds

100V

Series

ISC

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.24mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

245W

Typical Gate Charge Qg @ Vgs

91nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.1mm

Standards/Approvals

No

Width

1.1 mm

Height

5.1mm

Automotive Standard

No

The Infineon OptiMOS™ 6 industrial power MOSFET 100V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.

Lower and softer reverse recovery charge

Ideal for high switching frequency

High avalanche energy rating

RoHS compliant

Low conduction losses

Low switching losses

Environmentally friendly

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