STMicroelectronics STHU36N Type N-Channel MOSFET, 29 A, 600 V, 7-Pin HU3PAK STHU36N60DM6AG
- RS stock no.:
- 234-8898P
- Mfr. Part No.:
- STHU36N60DM6AG
- Manufacturer:
- STMicroelectronics
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Subtotal 10 units (supplied on a continuous strip)*
R 664,60
(exc. VAT)
R 764,30
(inc. VAT)
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In Stock
- Plus 560 unit(s) shipping from 26 January 2026
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Units | Per unit |
|---|---|
| 10 - 99 | R 66.46 |
| 100 - 249 | R 64.47 |
| 250 - 499 | R 61.89 |
| 500 + | R 59.41 |
*price indicative
- RS stock no.:
- 234-8898P
- Mfr. Part No.:
- STHU36N60DM6AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HU3PAK | |
| Series | STHU36N | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Maximum Power Dissipation Pd | 210W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HU3PAK | ||
Series STHU36N | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Maximum Power Dissipation Pd 210W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested