Renesas Electronics Type N-Channel MOSFET, 25 A, 60 V Enhancement, 4-Pin SOT-669 RJK0651DPB-00#J5

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Subtotal 50 units (supplied on a continuous strip)*

R 1 288,80

(exc. VAT)

R 1 482,10

(inc. VAT)

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Units
Per unit
50 - 95R 25.776
100 - 245R 25.002
250 - 995R 24.002
1000 +R 23.042

*price indicative

Packaging Options:
RS stock no.:
234-7155P
Mfr. Part No.:
RJK0651DPB-00#J5
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-669

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 60 V. It is capable of 4.5 V gate drive.

High speed switching

Low drive current

High density mounting

Low on-resistance

Pb-free

Halogen-free