Infineon BSC Type N-Channel MOSFET, 114 A, 150 V N, 8-Pin SuperSO8 5 x 6 BSC074N15NS5ATMA1
- RS stock no.:
- 234-6989
- Mfr. Part No.:
- BSC074N15NS5ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 201,03
(exc. VAT)
R 231,184
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,926 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 100.515 | R 201.03 |
| 10 - 98 | R 98.00 | R 196.00 |
| 100 - 248 | R 95.06 | R 190.12 |
| 250 - 498 | R 91.26 | R 182.52 |
| 500 + | R 87.61 | R 175.22 |
*price indicative
- RS stock no.:
- 234-6989
- Mfr. Part No.:
- BSC074N15NS5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.2mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 46W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.2mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 46W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ N- channel MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. The low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. It has 114A maximum continuous drain current and 150V maximum drain source voltage. It is Ideal for high-frequency switching and synchronous rectification.
Lowest RDS(on) enables highest power density and efficiency
Higher operating temperature rating to 175°C for increased reliability
Low RthJC for excellent thermal behaviour
Lower reverse recovery charge (Qrr)
Very low on-resistance RDS(on)
Very low reverse recovery charge(Qrr)
Pb-free lead plating
RoHS compliant
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