Infineon IPW60R Type N-Channel MOSFET, 31 A, 600 V Enhancement, 8-Pin TO-247
- RS stock no.:
- 222-4941
- Mfr. Part No.:
- IPW60R099CPAFKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 980,56
(exc. VAT)
R 3 427,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 180 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | R 99.352 | R 2,980.56 |
| 90 - 120 | R 96.869 | R 2,906.07 |
| 150 + | R 93.963 | R 2,818.89 |
*price indicative
- RS stock no.:
- 222-4941
- Mfr. Part No.:
- IPW60R099CPAFKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | IPW60R | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series IPW60R | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS™ CPA Superjunction MOSFET is specially designed for DC-DC converters for automotive application
Lowest figure-of-merit RON x Qg
Ultra low gate charge
Extreme dv/dt rated
High peak current capability
Automotive AEC Q101 qualified
Green package (RoHS compliant)
Related links
- Infineon CoolMOS™ N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R099CPAFKSA1
- Infineon CoolMOS™ CFD7 N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R070CFD7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
- STMicroelectronics Mdmesh M6 series N-Channel MOSFET 600 V, 3-Pin TO-220FP STL47N60M6
- Toshiba TK N-Channel MOSFET 600 VS1VX(S
- Toshiba TK N-Channel MOSFET 600 VS1VQ(O
- Toshiba TK N-Channel MOSFET 600 VS4VX(M
- N-Channel MOSFET 600 V, 3-Pin D2PAK Infineon IPB60R099CPAATMA1
