Infineon IMZ1 Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 4-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 30 units)*

R 2 380,62

(exc. VAT)

R 2 737,71

(inc. VAT)

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Temporarily out of stock
  • 570 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Tube*
30 - 60R 79.354R 2,380.62
90 - 120R 77.37R 2,321.10
150 +R 75.049R 2,251.47

*price indicative

RS stock no.:
222-4866
Mfr. Part No.:
IMZ120R090M1HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

1200V

Series

IMZ1

Package Type

TO-247

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

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