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Infineon CoolMOS Type N-Channel MOSFET, 109 A, 600 V Enhancement, 4-Pin TO-247

RS stock no.:: 222-4726
Mfr. Part No.:: IPZ60R017C7XKSA1
Manufacturer:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 109 A, 600 V Enhancement, 4-Pin TO-247

Image representative of range

Bulk discount available

Subtotal (1 tube of 30 units)*

R 5 327,97

(exc. VAT)

R 6 127,17

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

90 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
30 - 60	R 177.599	R 5,327.97
90 - 120	R 173.159	R 5,194.77
150 +	R 167.964	R 5,038.92

*price indicative

RS stock no.:: 222-4726
Mfr. Part No.:: IPZ60R017C7XKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	109A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	17mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	240nC
	Maximum Power Dissipation Pd	446W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	16.13mm
	Width	5.21 mm
	Standards/Approvals	No
	Height	21.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 109A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series CoolMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 17mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 240nC
	Maximum Power Dissipation Pd 446W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 16.13mm
	Width 5.21 mm
	Standards/Approvals No
	Height 21.1mm
	Automotive Standard No

Datasheet - IPZ60R017C7XKSA1

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

Infineon CoolMOS Type N-Channel MOSFET, 109 A, 600 V Enhancement, 4-Pin TO-247

FREE delivery for orders over R 1,500.00

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