onsemi NVMFS5C Type N-Channel MOSFET, 277 A, 40 V Enhancement, 5-Pin DFN NVMFS5C420NLT1G
- RS stock no.:
- 221-6752
- Mfr. Part No.:
- NVMFS5C420NLT1G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 395,72
(exc. VAT)
R 455,08
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,490 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 39.572 | R 395.72 |
| 20 - 90 | R 38.583 | R 385.83 |
| 100 - 240 | R 37.426 | R 374.26 |
| 250 - 490 | R 35.929 | R 359.29 |
| 500 + | R 34.492 | R 344.92 |
*price indicative
- RS stock no.:
- 221-6752
- Mfr. Part No.:
- NVMFS5C420NLT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 277A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Series | NVMFS5C | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 146W | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 and PPAP Capable | |
| Length | 6.3mm | |
| Width | 1.1 mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 277A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Series NVMFS5C | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 146W | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 and PPAP Capable | ||
Length 6.3mm | ||
Width 1.1 mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
The ON Semiconductor automotive power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. It available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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