Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252 IRFR3504ZTRPBF
- RS stock no.:
- 220-7494
- Mfr. Part No.:
- IRFR3504ZTRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 161,24
(exc. VAT)
R 185,43
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 11,800 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 16.124 | R 161.24 |
| 20 - 90 | R 15.721 | R 157.21 |
| 100 - 240 | R 15.249 | R 152.49 |
| 250 - 490 | R 14.639 | R 146.39 |
| 500 + | R 14.053 | R 140.53 |
*price indicative
- RS stock no.:
- 220-7494
- Mfr. Part No.:
- IRFR3504ZTRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 90W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Distrelec Product Id | 304-39-422 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 90W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Distrelec Product Id 304-39-422 | ||
Automotive Standard No | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below <100kHz
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High performance in low frequency applications
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