Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R360P6SATMA1

RS stock no.:: 220-7435
Mfr. Part No.:: IPL60R360P6SATMA1
Manufacturer:: Infineon

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R360P6SATMA1

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Bulk discount available

Subtotal (1 pack of 10 units)*

R 295,00

(exc. VAT)

R 339,20

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 9,960 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
10 - 10	R 29.50	R 295.00
20 - 90	R 28.763	R 287.63
100 - 240	R 27.90	R 279.00
250 - 490	R 26.784	R 267.84
500 +	R 25.713	R 257.13

*price indicative

RS stock no.:: 220-7435
Mfr. Part No.:: IPL60R360P6SATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	ThinPAK
	Series	CoolMOS P6
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	89.3W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5.1mm
	Height	1.1mm
	Width	6.1 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type ThinPAK
	Series CoolMOS P6
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 89.3W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5.1mm
	Height 1.1mm
	Width 6.1 mm
	Automotive Standard No

Datasheet - IPL60R360P6SATMA1

The Infineon new Cool MOS Thin PAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The Thin PAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behaviour and EMI.

Extremely low losses due to very low FOMRdson*Qg and Eoss

Very high commutation ruggedness

Easy to use/drive

Pb-freeplating, Halogen free mold compound

Qualified for industrial grade applications according to JEDEC

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R360P6SATMA1

FREE delivery for orders over R 1,500.00

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