Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 57.2 A, 650 V Enhancement TO-263

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Subtotal (1 reel of 1000 units)*

R 28 050,00

(exc. VAT)

R 32 260,00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 - 1000R 28.05R 28,050.00
2000 - 2000R 27.349R 27,349.00
3000 +R 26.529R 26,529.00

*price indicative

RS stock no.:
220-7392
Mfr. Part No.:
IPB65R190CFDAATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

57.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS P7

Mount Type

Surface

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.

First 650V automotive qualified technology with integrated fast body diode on the market

Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt

Low gate charge value Q g

Low Q rr at repetitive commutation on body diode & low Q oss

Reduced turn on and turn of delay times

Increased safety margin due to higher breakdown voltage

Reduced EMI appearance and easy to design in

Better light load efficiency

Lower switching losses

Higher switching frequency and/or higher duty cycle possible

High quality and reliability

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