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Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V TO-252 IRLR2703TRPBF

RS stock no.:: 218-3128
Mfr. Part No.:: IRLR2703TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V TO-252 IRLR2703TRPBF

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Bulk discount available

Subtotal (1 pack of 25 units)*

R 99,475

(exc. VAT)

R 114,40

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 16 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 25	R 3.979	R 99.48
50 - 75	R 3.88	R 97.00
100 - 225	R 3.763	R 94.08
250 - 475	R 3.613	R 90.33
500 +	R 3.468	R 86.70

*price indicative

RS stock no.:: 218-3128
Mfr. Part No.:: IRLR2703TRPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	65mΩ
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	341W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	162nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	20.7mm
	Length	15.87mm
	Standards/Approvals	No
	Width	5.31 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Maximum Drain Source Resistance Rds 65mΩ
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 341W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 162nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 20.7mm
	Length 15.87mm
	Standards/Approvals No
	Width 5.31 mm
	Automotive Standard No

Datasheet - IRLR2703TRPBF

The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.

Ultra Low On-Resistance

Fast Switching

Fully Avalanche Rated

Lead free

Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V TO-252 IRLR2703TRPBF

FREE delivery for orders over R 1,500.00

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