Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V, 3-Pin TO-252 IRLR2703TRPBF
- RS stock no.:
- 218-3128
- Mfr. Part No.:
- IRLR2703TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 245,325
(exc. VAT)
R 282,125
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 26 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.813 | R 245.33 |
| 50 - 75 | R 9.568 | R 239.20 |
| 100 - 225 | R 9.28 | R 232.00 |
| 250 - 475 | R 8.909 | R 222.73 |
| 500 + | R 8.553 | R 213.83 |
*price indicative
- RS stock no.:
- 218-3128
- Mfr. Part No.:
- IRLR2703TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 341W | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 341W | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.
Ultra Low On-Resistance
Fast Switching
Fully Avalanche Rated
Lead free
Related links
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- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
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