Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement TO-252 IRFR3410TRLPBF

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Subtotal (1 pack of 20 units)*

R 258,02

(exc. VAT)

R 296,72

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 12.901R 258.02
40 - 80R 12.578R 251.56
100 - 220R 12.201R 244.02
240 - 480R 11.713R 234.26
500 +R 11.244R 224.88

*price indicative

Packaging Options:
RS stock no.:
218-3106
Mfr. Part No.:
IRFR3410TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

31Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Height

6.22mm

Width

2.39 mm

Distrelec Product Id

304-39-421

Automotive Standard

No

The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.

RoHS Compliant

175°C Operating Temperature

Fast switching

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